general purpose transistor npn silicon c ollec t or-emitt er v oltage symbol v ceo v alue 45 unit rating 1 2 3 base collect or emitter i c v cbo v ebo 50 6.0 ma dc vdc vdc vdc *m oistur e s ensitivit y l e v el: 1 *esd r a ting - human b o d y m o del:>4000v -m achine m o del:>400v c ollec t or c ur r en t-c on tinuous 100 1.fr-5=1.0 x 0.75 x 0.062 in. 2.a lumina=0.4 x 0.3 x 0.024 in. 99.5% alumina BC5347B=1f device marking BC5347B h t t p : / / w w w . w e i t r o n . c o m . t w w e i t r o n m a x i m u m r a t i n g s ( t a =25 c unless other wise not ed) t otal d e vic e d issipa tion fr-5 b oar d (n ot e 1.)t a =25 c d er a t e ab o v e 25 c t her mal r esistanc e , j unc tion t o a mbien t t her mal r esistanc e , j unc tion t o a mbien t t otal d e vic e d issipa tion a lumina substr a t e , (n ot e 2.) t a =25 c d er a t e ab o v e 25 c j unc tion and s t or age , t emp er a tur e r ange characteristics t j,t st g r ja p d p d symbol max 225 1.8 556 300 2.4 417 -55 t o +150 unit mw q q mw/ c c/w mw mw/ c c/w c thermal characteristics (n ot e 1.) (n ot e 2.) r ja sot -23 1 2 3 c ollec t or-b ase v oltage emitt er-b ase v o ltage
weitron http://www .weitron.com.tw w e i t r o n small-signal characteristics c ur r en t-g ain-b and width p r o duc t (i c = 10ma, v ce= 5.0vdc , f=100mhz) output c apacitanc e ( v cb = 10v , f=1.0mhz) n oise f igur e (i c = 0.2ma, v ce = 5.0vdc , rs=2.0 k , f=1.0 khz, b w=200hz) f t c ob o nf mhz pf 100 - - - - - - - - - - - 4.5 10 db w v v v dc c ur r en t g ain (i c = 10 a, v ce =5.0v ) c ollec t or-emitt er s a tur a tion v oltage (i c = 10ma, ib=0.5ma) (i c = 100ma, i b =5.0ma) b ase-emitt er s a tur a tion v oltage (i c = 10ma, i b =0.5ma) (i c = 100ma, i b =5.0ma) b ase-emitt er on v oltage (i c = 2.0ma, v ce =5.0v ) (i c = 10ma, v c e =5.0v ) hfe v ce(sa t) vbe(sa t) vbe(on) on characteristics - - - - - - 660 - - 580 150 -0.7 -0.9 0.25 0.6 700 770 - - - - - - - - - - - - (i c = 2.0ma, v ce =5.0v ) BC5347B c ollec t or-emitt er b r eakdo wn v oltage (i c = 10ma) c ollec t or-emitt er b r eakdo wn v oltage (i c =10 a ,v eb =0) c ollec t or-b ase b r eakdo wn v oltage (i c =10 a) emitt er-b ase b r eakdo wn v oltage (i e =1.0 a) c ollec t or c ut off c ur r en t ( v cb =30v ) ( v cb =30v , t a =150 c) v(br)ceo v(br)cbo v(br)ces v(br)ebo icbo na ma v v v v characteristics symbol min max unit off characteristics t yp 45 50 50 6.0 15 5.0 electrical characteristics ( t a =25 c u nless o ther wise not ed) 200 290 450
weitron w e i t r o n BC5347B http://www .weitron.com.tw fig.5 capacitances v r , reverse v ol t age (v ol ts) c,cap acit ance (pf) 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 10 7.0 5.0 3.0 2.0 1.0 c ib t a =25 c c ob 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 i c, collect or current (madc) fig.6 curr ent-gain- bandwidth pr oduct f t , current -gain-bandwidth product (mhz) 400 300 200 100 80 60 40 20 30 v ce =10v t a = 25 c fig.1 normalized dc curr ent gain ic, collect or current (madc) h fe ,normalized dc current gain 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2.0 1.5 1.0 0.8 0.6 0.4 0.3 0.2 v ce =10v t a =25 c fig.2 "saturation" and "on" v oltage i c , collect or current (madc) v , v ol t age (v ol ts) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 t a =25 c v be (sa t) @i c /b c =10 v be (on) @v ce = 10v v ce (sa t) @i c /b c =10 fig.3 collector saturation region i b , base current (ma) v ce , collect or- emitter v ol t age (v) t a =25 c i c = 200ma i c =-50ma i c = 20ma i c = 10ma i c = 100ma 0.02 0.1 1.0 10 20 2.0 1.6 1.2 0.8 0.4 0 q vb , tempera ture coefficient (mv/ c) -55 c t o +125 c 1.0 1.2 1.6 2.0 2.4 2.8 0.2 1.0 10 100 ic, collect or current (ma) fig.4 base-emitter t emperatur e coefficient
dim a b c d e g h j k l m m i n 0 . 3 5 1 . 1 9 2 . 1 0 0 . 8 5 0 . 4 6 1 . 7 0 2 . 7 0 0 . 0 1 0 . 8 9 0 . 3 0 0 . 0 7 6 max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 a b d e g m l h j t o p v i e w k c sot -23 package outline dimensions u nit:mm weitron http://www .weitron.com.tw BC5347B
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